CEM8435A Chino Excel Technology, CEM8435A Datasheet

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CEM8435A

Manufacturer Part Number
CEM8435A
Description
P-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Chino Excel Technology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM8435A
Manufacturer:
CET
Quantity:
20 000
P-Channel Enhancement Mode Field Effect Transistor
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (T
FEATURES
-30V , -7.9A , R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface Mount Package.
Gate-Source Voltage
Drain Current-Continuous @T
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Parameter
R
-Pulsed
DS(ON)
DS(ON)
=24m
=40m
b
a
a
@V
@V
J
SO-8
=125 C
GS
GS
=-10V.
=-4.5V.
a
a
1
5-83
A
T
=25 C unless otherwise noted)
Symbol
DS(ON)
J
R
V
, T
V
I
P
DM
I
GS
I
DS
D
S
D
STG
JA
.
CEM8435A
-55 to 150
Limit
-2.1
-30
50
7.9
20
25
2.5
D
S
8
1
D
7
S
2
D
S
6
3
March 1998
Unit
W
C
V
V
A
A
A
C
D
G
/W
5
4
5

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CEM8435A Summary of contents

Page 1

... Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Drain Current-Continuous @T b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient CEM8435A @V =-10V =-4.5V DS(ON) SO-8 1 =25 C unless otherwise noted) A Symbol V ...

Page 2

... Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CEM8435A =25 C unless otherwise noted) A Symbol Condition V 0V, I -250µ ...

Page 3

... Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 3600 3000 2400 1800 1200 600 Drain-to Source Voltage (V) DS Figure 3. Capacitance CEM8435A =25 C unless otherwise noted) A Condition Symbol 0V -2. =10,8,7, ...

Page 4

... Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 10 V =-15V =-7. Qg, Total Gate Charge (nC) Figure 9. Gate Charge CEM8435A 1.15 I =-250 A D 1.10 1.05 1.00 0.95 0.90 0.85 -50 - Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 20.0 V =0V GS 10.0 1.0 20 ...

Page 5

... GS R GEN G S Figure 11. Switching Test Circuit 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve CEM8435A d(on) 90% V OUT V OUT 10% 50 10% INVERTED PULSE WIDTH Figure 12. Switching Waveforms - ...

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