CEM2108 Chino-Excel Technology Corp., CEM2108 Datasheet - Page 3

no-image

CEM2108

Manufacturer Part Number
CEM2108
Description
Dual N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Corp.
Datasheet
3600
3000
2400
1800
1200
600
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
25
20
15
10
0.0
5
0
0
-50
0
Figure 5. Gate Threshold Variation
V
I
D
V
Figure 1. Output Characteristics
DS
=250µA
GS
V
V
-25
T
=V
DS
DS
=5,4,3V
J
, Junction Temperature( C)
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
0.5
Figure 3. Capacitance
0
with Temperature
25
10
50
1.0
75
15
C iss
C oss
C rss
100
1.5
V
GS
20
=2.5V
125
2.0
150
25
3
10
10
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
1
0
-1
5
0
-100
Figure 6. Body Diode Forward Voltage
0.4
0
V
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=10A
V
, Body Diode Forward Voltage (V)
T
=4.5V
GS
-50
J
, Junction Temperature( C)
0.6
, Gate-to-Source Voltage (V)
with Temperature
T
J
CEM2108
0
1
=125 C
0.8
50
1.0
100
2
25 C
1.2
150
-55 C
200
1.4
3
5

Related parts for CEM2108