TEA1211HN Philips Semiconductors, TEA1211HN Datasheet - Page 11

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TEA1211HN

Manufacturer Part Number
TEA1211HN
Description
High efficiency auto-up/down DC/DC converter
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
7.12.5.3
The I
value that defines which register is to be accessed next.
8
Notes
1. Human Body Model: equivalent to discharging a 100 pF capacitor via a 1.5 k resistor.
2. Machine Model: equivalent to discharging a 200 pF capacitor via a 0.75 H series inductor.
9
2003 Oct 13
handbook, full pagewidth
V
P
T
T
T
V
R
j
amb
stg
n
tot
esd
th(j-a)
High efficiency auto-up/down
DC/DC converter
S = START condition.
P = STOP condition.
SYMBOL
SYMBOL
LIMITING VALUES
THERMAL CHARACTERISTICS
2
C-bus configuration for the different TEA1211HN write cycles is shown in Fig.10. The word address is an eight bit
Write Cycle
voltage on any pin with respect
to GND
total internal power dissipation
junction temperature
ambient temperature
storage temperature
electrostatic discharge voltage
thermal resistance from junction
to ambient
pins LXA
all other pins
S
PARAMETER
PARAMETER
SLAVE ADDRESS
Fig.10 Master transmits to slave receiver (write mode).
acknowledgement
from slave
R/W
0
A
WORD ADDRESS
shut-down mode
operational mode
note 1
note 2
JEDEC Class II; note 1
JEDEC Class II; note 2
mounted on dedicated PCB in
free air
11
CONDITIONS
CONDITIONS
acknowledgement
from slave
A
n bytes
DATA
memory word address
acknowledgement
auto increment
from slave
0.5
0.5
40
40
40
MIN.
MDB010
A
VALUE
35
P
Preliminary specification
+6.0
+5.5
1000
+150
+85
+125
TEA1211HN
800
200
2000
200
MAX.
UNIT
K/W
V
V
mW
V
V
V
V
C
C
C
UNIT

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