TEA1093T Philips Semiconductors, TEA1093T Datasheet - Page 17

• Manufacturer Part Number: TEA1093T
• Description: Hands-free IC
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1996 Feb 09
Microphone channel (MIC, GAT, MOUT, MUTET and MICGND)
M
G
V
T
V
V
I
Loudspeaker channel (RIN1, RIN2, GAR, LSP1, LSP2 and DLC/MUTER)
L
G
MUTET
Z
Z
OUDSPEAKER AMPLIFIER
G
G
G
RANSMIT MUTE INPUT
G
G
G
notx
IL
IH
Hands-free IC
vtx
vrx
ICROPHONE AMPLIFIER
SYMBOL
i
i
vtxr
vtxT
vtxf
vtxm
vrxr
vrxT
input impedance between pin
MIC and MICGND
voltage gain from pin MIC to
MOUT in transmit mode
voltage gain adjustment with
R
voltage gain variation with
temperature referenced
to 25 C
voltage gain variation with
frequency referenced to 1 kHz
noise output voltage at pin
MOUT
LOW level input voltage
HIGH level input voltage
input current
voltage gain reduction with
MUTET active
input impedance
voltage gain in receive mode
voltage gain adjustment with
R
voltage gain variation with
temperature referenced
to 25 C
GAT
GAR
the difference between RIN1
and RIN2 to the difference
between LSP1 and LSP2,
bridge-tied load
the difference between RIN1
and RIN2 to LSP1 or LSP2,
single-ended load
MUTET
PARAMETER
V
V
T
V
f = 300 to 3400 Hz
pin MIC connected to
MICGND
through 200
series with 10 F;
psophometrically
weighted (P53 curve)
MUTET = HIGH
MUTET = HIGH
between pins RIN1 or
RIN2 and GND
between pins RIN1
and RIN2
V
V
T
amb
amb
MIC
MIC
MIC
RIN
RIN
CONDITIONS
= 20 mV (RMS)
= 20 mV (RMS);
= 1 mV (RMS)
= 1 mV (RMS);
= 1 mV (RMS);
= 25 to +75 C
= -25 to +75 C
17
in
17
12.5
V
1.5
17
34
21.5
15.5
10
15
GND
MIN.
0.4 V
20
15
2.5
80
20
40
24
18
TYP.
0.3
0.3
100
0.3
23
17.5
+10
0.3
V
5
23
46
26.5
20.5
+15
Product specification
BB
MAX.
+ 0.4 V
TEA1093
k
dB
dB
dB
dB
dBmp
V
V
dB
k
k
dB
dB
dB
dB
UNIT
A