Ordering number : ENN7013
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FQ
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =0.8A
I D =0.8A, V GS =4V
I D =0.4A, V GS =2.5V
I D =0.1A, V GS =1.8V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
MCH6616
Conditions
Package Dimensions
unit : mm
2173A
Conditions
0.65
4
3
2
2.0
0.8mm)1unit
5
2
1
6
0.3
[MCH6616]
min
N-Channel Silicon MOSFET
0.4
1.6
20
6
1
71801 TS IM TA-3262
5
2
0.15
Ratings
typ
4
3
Ratings
180
220
300
2.4
MCH6616
Continued on next page.
--55 to +150
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
max
230
310
450
150
1.3
1.6
6.4
0.8
10
20
10
1
No.7013-1/4
Unit
Unit
m
m
m
W
V
V
A
A
V
V
S
C
C
A
A