MCH6607 Sanyo, MCH6607 Datasheet

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MCH6607

Manufacturer Part Number
MCH6607
Description
Ultrahigh-Speed Switching Applications
Manufacturer
Sanyo
Datasheet
Ordering number : ENN7039
Preliminary
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FG
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitaing high-density mounting.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
I D =--1mA, V GS =0
V DS =- -30V, V GS =0
V GS = 8V, V DS =0
V DS =- -10V, I D =--100 A
V DS =- -10V, I D =--100mA
I D =--100mA, V GS =--4V
I D =--50mA, V GS =- -2.5V
I D =--10mA, V GS =- -1.5V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
MCH6607
Conditions
Package Dimensions
unit : mm
2173A
Conditions
0.65
4
3
2
2.0
0.8mm)1unit
5
2
1
6
0.3
[MCH6607]
min
P-Channel Silicon MOSFET
--0.4
210
--30
6
1
82201 TS IM TA-2462
5
2
Ratings
0.15
typ
Ratings
4
3
300
2.4
3.5
MCH6607
10
Continued on next page.
--55 to +150
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
max
--0.4
--1.6
--1.4
150
--30
--10
0.8
3.1
4.9
20
10
10
No.7039-1/4
Unit
Unit
mS
W
V
V
A
A
V
V
C
C
A
A

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MCH6607 Summary of contents

Page 1

... -30V GSS 8V (off -10V =--100 A yfs -10V =--100mA R DS (on =--100mA =-- (on =--50mA -2. (on =--10mA -1.5V P-Channel Silicon MOSFET MCH6607 [MCH6607] 0 Source1 2 : Gate1 2 ...

Page 2

... See specified Test Circuit =--10V =--10V -200mA Qgs V DS =--10V =--10V -200mA Qgd V DS =--10V =--10V -200mA =--200mA Electrical Connection --15V --100mA R L =150 D V OUT MCH6607 S --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --1.5V --0.05 --0.6 --0.7 --0.8 --0.9 --1.0 ...

Page 3

... Diode Forward Voltage Ciss, Coss, Crss -- V DS 100 1.0 0 --5 --10 --15 --20 Drain-to-Source Voltage MCH6607 100 --2. 1 1.0 --0.001 IT00241 1 0 0.01 100 120 140 ...

Page 4

... Drain-to-Source Voltage Note on usage : Since the MCH6607 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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