EPC9102 EPC, EPC9102 Datasheet

EPC9102

Manufacturer Part Number

EPC9102

Description

Specifications: Family: Eval Boards - DC/DC & AC/DC (Off-Line) SMPS ; Series: eGaN® ; Main Purpose: DC/DC, Step Down ; Outputs and Type: 1, Isolated ; Power - Output: - ; Voltage - Output: 12V ; Current - Output: 8A ; Voltage - Input: 36 ~ 60V ;

Manufacturer

EPC

Datasheet

1.EPC9102.pdf (5 pages)

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eGaN® FET DATASHEET

EPC – EFFICIENT POWER CONVERSION CORPORATION |

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

All measurements were done with substrate shorted to source.

EPC2001 – Enhancement Mode Power Transistor

Note 1: R

Static Characteristics (T

Source-Drain Characteristics (T

DSS

DS(ON)

, 25 A

STG

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

, 100 V

DS(ON)

GS(th)

DSS

GSS

is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

DSS

, 7 mW

θ JC

θ JB

θ JA

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Gate-Source Forward Leakage

Source-Drain Forward Voltage

Gate-Source Reverse Leakage

PARAMETER

Drain-Source On Resistance

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

Thermal Resistance, Junction to Ambient (Note 1)

Drain-to-Source Voltage

Gate Threshold Voltage

Drain Source Leakage

= 25˚C unless otherwise stated)

= 25˚C, θ

= 25˚C unless otherwise stated)

Maximum Ratings

= 13)

NEW PRODUCT

and zero Q

WWW.EPC-CO.COM

= 0.5 A, V

DS(ON)

Thermal Characteristics

TEST CONDITIONS

-40 to 125

-40 to 150

= 0 V, I

, while its lateral device structure

= 80 V, V

= V

= 5 V, I

. The end result is a device that

100

-5

= -5 V

, I

= 5 V

= 0 V, T = 125˚C

= 0 V, T = 25˚C

= 300 µA

= 5 mA

= 25 A

= 0 V

˚C

MIN

100

0.7

EPC2001 eGaN® FETs are supplied only in

passivated die form with solder bars

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

EFFICIENT POWER CONVERSION

1.75

100

TYP

0.2

1.4

5.6

1.8

TYP

1.6

DS(on)

MAX

250

2.5

HAL

˚C/W

EPC2001

| PAGE 1

UNIT

µA

Related parts for EPC9102

EPC9102 Summary of contents

Page 1

... 125˚ Thermal Characteristics WWW.EPC-CO.COM | COPYRIGHT 2011 | EFFICIENT POWER CONVERSION HAL EPC2001 eGaN® FETs are supplied only in passivated die form with solder bars Applications • High Speed DC-DC conversion V • Class D Audio • Hard Switched and High Frequency Circuits A Benefits • Ultra High Efficiency V • ...

Page 2

... Various Current DS(on 2 – Gate to Source Voltage (V) GS Figure 5: Capacitance 1.4 EPC – EFFICIENT POWER CONVERSION CORPORATION | TEST CONDITIONS 100 ...

Page 3

... V – Source to Drain Voltage (V) SD Figure 9: Normalized Threshold Voltage vs. Temperature - – Junction Temperature ( ˚ All measurements were done with substrate shortened to source. EPC – EFFICIENT POWER CONVERSION CORPORATION | 4.5 OSS ISS ...

Page 4

... Dimension (mm) c (note 2) f (note 2) DIE MARKINGS Die orientation dot Gate Pad solder bar is under this corner EPC – EFFICIENT POWER CONVERSION CORPORATION | Normalized Maximum Transient Thermal Impedance Single Pulse Rectangular Pulse Duration, seconds ...

Page 5

... Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ...

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