RF1S60P03SM Intersil Corporation, RF1S60P03SM Datasheet - Page 7

• Manufacturer Part Number: RF1S60P03SM
• Description: 60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

PSPICE Electrical Model
.SUBCKT RFP60P03 2 1 3
CA 12 8 5.01e-9
CB 15 14 3.9e-9
CIN 6 8 3.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -36.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 2.36e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 3.25
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 11.28e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.92
.MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8)
.MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12)
.MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6)
.MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6)
.MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
4-146
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
RFG60P03, RFP60P03, RF1S60P03SM
GATE
1
LGATE
9
RGATE
20
REV 6/21/94
12
DPLCAP
+
CA
EVTO
S1A
S1B
18
8
EGS
13
8
10
-
RIN
+
-
6
8
14
13
S2A
S2B
13
-
VTO
ESG
15
EDS
6
8
6
CB
CIN
+
+
-
+
16
5
8
5
14
MOS1
RDRAIN
21
8
RSOURCE
EBREAK
MOS2
DBREAK
11
17
17
18
+
RBREAK
-
7
IT
LSOURCE
LDRAIN
DBODY
18
19
+
RVTO
VBAT
SOURCE
DRAIN
2
3