RF1S42N03LSM Intersil Corporation, RF1S42N03LSM Datasheet - Page 5

• Manufacturer Part Number: RF1S42N03LSM
• Description: 42A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Typical Performance Curves
Test Circuits and Waveforms
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
VARY t
REQUIRED PEAK I
0V
2500
2000
1500
1000
500
2.0
1.5
1.0
0.5
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0
0
P
0
-80
TO OBTAIN
V
V
GS
t
GS
P
JUNCTION TEMPERATURE
= V
-40
DS
V
AS
5
DS
T
, I
J
, DRAIN TO SOURCE VOLTAGE (V)
D
, JUNCTION TEMPERATURE (
= 250 A
0
6-271
10
R
G
40
C
C
C
OSS
RSS
ISS
80
15
V
C
C
C
V
I
Unless Otherwise Specified (Continued)
AS
GS
ISS
RSS
OSS
DS
120
RFP42N03L, RF1S42N03LSM
= 0V, f = 0.1MHz
DUT
= C
o
= C
0.01
C)
L
C
20
GS
GD
DS
160
+ C
+ C
GD
+
-
GD
V
DD
200
25
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
0
30
24
18
12
6
0
2.0
1.5
1.0
0.5
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
0
-80
I
D
V
20
DD
= 250 A
VOLTAGE vs JUNCTION TEMPERATURE
CONSTANT GATE CURRENT
I G REF
--------------------- -
I G ACT
-40
= BV
T
DSS
J
I
, JUNCTION TEMPERATURE (
AS
0
R
I
V
G(REF)
0.75 BV
0.50 BV
0.25 BV
GS
L
t
t, TIME ( s)
P
= 0.714
= 5V
40
= 0.6mA
DSS
DSS
DSS
BV
t
AV
DSS
80
V
DD
80
I G REF
--------------------- -
I
= BV
G ACT
120
V
DSS
o
DS
C)
160
V
DD
4
3
2
5
1
0
200