RF1S30N06LESM Intersil Corporation, RF1S30N06LESM Datasheet - Page 3

• Manufacturer Part Number: RF1S30N06LESM
• Description: 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Typical Performance Curves
200
100
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
10
1.0
0.4
1
1.2
0.8
0.6
0.2
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
1
0
0 0
0.01
0.1
1
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
-5
TEMPERATURE
0.5
0.2
0.1
0.05
0.02
0.01
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
C
50
, CASE TEMPERATURE (
DS(ON)
6-262
10
75
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
100
Unless Otherwise Specified
RFP30N06LE, RF1S30N06LESM
125
o
T
C)
J
= MAX RATED
10
T
-3
150
C
t, RECTANGULAR PULSE DURATION (s)
= 25
100ms
100ms
10ms
1ms
DC
o
C
175
100
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
500
100
30
10
20
40
20
0
25
10
-6
V
GS
V
FIGURE 5. PEAK CURRENT CAPABILITY
GS
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
= 10V
CASE TEMPERATURE
10
= 5V
50
-5
10
-1
T
10
C
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
-4
75
t, PULSE WIDTH (s)
10
J
-3
= P
100
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I
DM
P
=
10
DM
10
I
0
x Z
25
-2
JC
1
125
o
175 T c
---------------------- -
t
/t
C DERATE PEAK
1
2
x R
10
150
o
t
C)
2
–
-1
JC
T
150
C
+ T
10
= 25
C
0
10
o
C
1
175
10
1