XR1008-QB Mimix Broadband, XR1008-QB Datasheet

XR1008-QB

Manufacturer Part Number

XR1008-QB

Description

GaAs Receiver

Manufacturer

Mimix Broadband

Datasheet

1.XR1008-QB.pdf (7 pages)

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Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

XR1008-QB

Manufacturer:

HITTITE

Quantity:

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35.0-45.0 GHz GaAs Receiver

QFN, 7x7 mm

Features

General Description

Mimix Broadband’s 35.0-45.0 GHz packaged receiver has a

noise figure of 4.0 dB and 5.0 dBm Input Third Order

Intercept across the band. This device integrates a three

stage LNA followed by an image reject resistive pHEMT

mixer and includes an integrated LO doubler and buffer

amplifier. The use of integrated LO doubler and LO buffer

amplifier makes the provision of the LO easier than for

fundamental mixers at these frequencies. I and Q mixer

outputs are provided and an external 90 degree hybrid is

required to select the desired sideband. The device comes

in a 7x7mm QFN package that is RoHS compliant. This

device is well suited for Millimeter-wave Point-to-Point

Radio, LMDS, SATCOM and VSAT applications.

March 2007 - Rev 21-Mar-07

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

Sub-harmonic Receiver

Integrated LNA, Image Reject Mixer, LO Doubler/Buffer

+2.0 dBm LO Drive Level

8.0 dB Conversion Gain

4.0 dB NF

+5.0 dBm Input Third Order Intercept (IP3)

7x7mm QFN package

Electrical Characteristics (Ambient Temperature T = 25

Frequency Range (RF)

Frequency Range (LO)

Frequency Range (IF)

Input Return Loss RF (S11)

Small Signal Conversion Gain RF/IF (S21)

LO Input Drive (P

Image Rejection

Noise Figure (NF)

Isolation LO/RF @ LOx1/LOx2

Input Third Order Intercept (IIP3)

Input 1 dB Compression (IP1dB)

Drain Bias Voltage (Vd)

Gate Bias Voltage (Vg1,2)

Supply Current (Id) (Vd=4.0, Vg=-0.5V Typical)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

)

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Parameter

their obligation to be compliant with U.S. Export Laws.

Absolute Maximum Ratings

(1) Channel temperature affects a device’s MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

ESD - Human Body Model

ESD - Machine Body Model

Units

dBm

VDC

GHz

dBc

Min.

35.0

16.0

-1.2

40.0/40.0

Typ.

10.0

+2.0

20.0

+5.0

+4.0

-5.0

-0.5

180

8.0

4.0

+6.0 VDC

+0.3 VDC

+5 dBm

-65 to +165 deg C

-55 to MTTF Table

MTTF Table

Class 1A

Class M1

300 mA

R1008-QB

Max.

+5.5

+0.1

45.0

24.0

240

4.0

Page 1 of 7

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