R5009ANJTL ROHM Electronics, R5009ANJTL Datasheet - Page 2

• Manufacturer Part Number: R5009ANJTL
• Description: 10V Drive Nch MOSFET; Package: LPTS; Constitution materials list: Packing style: taping; Package quantity: 1000
• Manufacturer: ROHM Electronics

R5009ANJ
○
Forward voltage
∗ Pulsed
c
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Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Electrical characteristics (Ta=25°C)
∗ Pulsed
Body diode characteristics (Source-drain) (Ta=25°C)
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Parameter
Parameter
Symbol
V
SD
Symbol
V
R
V
∗
| Y
(BR)DSS
t
t
I
C
I
C
C
Q
DS(on)
Q
GS(th)
d(on)
d(off)
GSS
DSS
Q
t
t
oss
iss
rss
fs
r
f
gs
gd
g
Min.
|
−
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
500
2.5
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
Typ.
0.55
650
400
Max.
30
30
20
62
28
21
1.5
−
−
−
−
−
5
9
Max.
±100
0.72
100
Unit
4.5
V
−
−
−
−
−
−
−
−
−
−
−
−
I
S
2/5
Unit
= 9A, V
nC
nC
nC
nA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
GS
V
I
V
V
I
I
V
V
f=1MHz
I
V
R
R
V
I
V
R
D
D
D
D
D
Conditions
GS
DS
DS
DS
GS
GS
DD
GS
L
G
L
=1mA, V
=4.5A, V
=4.5A, V
=4.5A, V
=9A
=0V
=55.6Ω
=27.8Ω / R
=10Ω
=500V, V
=10V, I
=25V
=±30V, V
=0V
=10V
=10V
250V
GS
DS
DD
D
Conditions
GS
=1mA
=10V
=10V
DS
=0V
G
GS
250V
=10Ω
=0V
=0V
2009.02 - Rev.A
Data Sheet