HY29F800 Hynix Semiconductor, HY29F800 Datasheet - Page 7

• Manufacturer Part Number: HY29F800
• Description: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
• Manufacturer: Hynix Semiconductor

Table 3. HY29F800 Bus Operations Requiring High Voltage
Notes:
1. L = V
2. Address bits not specified are Don’t Care.
3. See text for additional information.
4. SA = sector address. See Table 1.
5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
by placing the byte or word address on the device’s
address inputs while the data to be written is input
on DQ[7:0] in Byte mode (BYTE# = L) and on
DQ[15:0] in Word mode (BYTE# = H). The host
system must drive the CE# and WE# pins Low
and drive OE# High for a valid write operation to
take place. All addresses are latched on the fall-
ing edge of WE# or CE#, whichever happens later.
All data is latched on the rising edge of WE# or
CE#, whichever happens first.
The ‘Device Commands’ section of this document
provides details on the specific device commands
implemented in the HY29F800.
Output Disable Operation
When the OE# input is at V
device is disabled and the data bus pins are placed
in the high impedance state.
Standby Operation
When the system is not reading from or writing to
the HY29F800, it can place the device in the
Standby mode. In this mode, current consump-
tion is greatly reduced, and the data bus outputs
are placed in the high impedance state, indepen-
dent of the OE# input. The Standby mode can
invoked using two methods.
Rev. 4.2/May 01
S
S
U
M
S
P
T
V
D
C
e
o r
e
e
n
e
e
a
e
m
p
o
t c
t c
t c
i r
n
v
e t
o r
d
O
c i f
u
c i
p
r o
r o
r o
e
a f
t c
o
e t
e
p
t a
a r
o i
r e
P
U
t c
G
IL
t c
H
H
o i
, H = V
o r
n
y r
n
r u
o r
Y
Y
t a
p
n
e t
r e
2
2
o r
u
o i
S
9
9
p
t c
e
e t
n
F
F
C
t c
8
8
t c
3
IH
o
0
0
r o
, X = Don’t Care. See DC Characteristics for voltage levels.
d
0
0
e
B
T
C
V
X
E
L
L
L
L
D I
#
O
V
V
X
E
L
L
L
IH
D I
D I
#
, output data from the
W
X
X
X
H
H
H
E
#
R
E
V
S
H
H
H
H
H
D I
E
T
#
A
1 [
S
S
8
X
X
X
X
A
A
1 :
4
4
] 2
The device enters the CE# CMOS Standby mode
if the CE# and RESET# pins are both held at V
± 0.5V. Note that this is a more restricted voltage
range than V
High, but not within V
in the CE# TTL Standby mode, but the standby
current will be greater.
The device enters the RESET# CMOS Standby
mode when the RESET# pin is held at V
If RESET# is held Low but not within V
the HY29F800 will be in the RESET# TTL Standby
mode, but the standby current will be greater. See
Hardware Reset Operation section for additional
information on the reset operation.
The device requires standard access time (t
read access when the device is in either of the
standby modes, before it is ready to read data. If
the device is deselected during erasure or pro-
gramming, it continues to draw active current until
the operation is completed.
Hardware Reset Operation
The RESET# pin provides a hardware method of
resetting the device to reading array data. When
the RESET# pin is driven Low for the minimum
specified period, the device immediately termi-
nates any operation in progress, tri-states the data
bus pins, and ignores all read/write commands for
[ A
V
V
V
V
V
X
D I
D I
D I
D I
D I
] 9
[ A
X
X
X
L
L
L
] 6
1, 2
[ A
IH
X
X
X
H
L
L
. If both CE# and RESET# are held
] 1
[ A
X
X
X
H
L
L
] 0
CC
U
P
± 0.5V, the device will be
n
D
0
0
o r
r p
Q
0
0
0
0 x
0 x
x
D
x
t o
e t
5 x
X
X
[
A
D
: 7
N I
0
1
c e
c
D
8
6
e t
] 0
=
=
e t
d
d
B
0
Y
=
D
2 x
X
X
X
X
T
HY29F800
D
N I
H
E
Q
2
SS
#
SS
1 [
± 0.5V,
± 0.5V.
: 5
B
H
H
H
H
H
H
CE
=
Y
g i
g i
g i
g i
g i
g i
] 8
T
) for
L
h
h
h
h
h
h
E
Z -
Z -
Z -
Z -
Z -
Z -
5
CC
#
7