HY29F400A Hynix Semiconductor, HY29F400A Datasheet

HY29F400A

Manufacturer Part Number

HY29F400A

Description

4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

Manufacturer

Hynix Semiconductor

Datasheet

1.HY29F400A.pdf (40 pages)

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KEY FEATURES

GENERAL DESCRIPTION

The HY29F400A is a 4 Megabit, 5 volt only CMOS

Flash memory organized as 524,288 (512K) bytes

or 262,144 (256K) words. The device is offered in

industry-standard 44-pin PSOP and 48-pin TSOP

packages.

The HY29F400A can be programmed and erased

in-system with a single 5-volt V

generated and regulated voltages are provided for

program and erase operations, so that the device

does not require a high voltage power supply to

perform those functions. The device can also be

programmed in standard EPROM programmers.

Access times as fast as 55 ns over the full operat-

ing voltage range of 5.0 volts ± 10% are offered

for timing compatibility with the zero wait state re-

quirements of high speed microprocessors. A 55

ns version operating over 5.0 volts ± 5% is also

Preliminary

Revision 1.0, January 2002

5 Volt Read, Program, and Erase

– Minimizes system-level power requirements

High Performance

– Access times as fast as 50 ns

– 20 mA typical active read current in byte

– 30 mA typical program/erase current

– 5 µA maximum CMOS standby current

Compatible with JEDEC Standards

– Package, pinout and command-set

– Provides superior inadvertent write

Sector Erase Architecture

– Boot sector architecture with top and

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte

– One 8 Kword, two 4 Kword, one 16 Kword

– A command can erase any combination of

– Supports full chip erase

Erase Suspend/Resume

– Temporarily suspends a sector erase

Low Power Consumption

mode, 28 mA typical in word mode

compatible with the single-supply Flash

device standard

protection

bottom boot block options available

and seven 64 Kbyte sectors in byte mode

and seven 32 Kword sectors in word mode

sectors

operation to allow data to be read from, or

programmed into, any sector not being

erased

supply. Internally

4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

LOGIC DIAGRAM

Sector Protection

– Any combination of sectors may be locked

Temporary Sector Unprotect

– Allows changes in locked sectors

Internal Erase Algorithm

– Automatically erases a sector, any

Internal Programming Algorithm

– Automatically programs and verifies data

Fast Program and Erase Times

– Byte programming time: 7 µs typical

– Sector erase time: 1.0 sec typical

– Chip erase time: 11 sec typical

Data# Polling and Toggle Status Bits

– Provide software confirmation of

Ready/Busy# Output (RY/BY#)

– Provides hardware confirmation of

100,000 Program/Erase Cycles Minimum

Space Efficient Packaging

– Available in industry-standard 44-pin

to prevent program or erase operations

within those sectors

(requires high voltage on RESET# pin)

combination of sectors, or the entire chip

at a specified address

completion of program or erase

operations

completion of program and erase

operations

PSOP and 48-pin TSOP and reverse

TSOP packages

A[17:0]

CE#

OE#

WE#

RESET#

BYTE#

DQ[15]/A-1

DQ[14:8]

RY/BY#

DQ[7:0]

HY29F400A

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