HY29F080 Hynix Semiconductor, HY29F080 Datasheet - Page 4

• Manufacturer Part Number: HY29F080
• Description: 8 Megabit (1M X 8), 5 Volt-only, Flash Memory
• Manufacturer: Hynix Semiconductor

HY29F080
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A ‘#’ symbol following the
signal name, e.g., RESET#, indicates that the sig-
nal is asserted in a Low state (nominally 0 volts).
SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 1 MByte Flash memory array is organized into
sixteen 64 KByte blocks called sectors (S0, S1, . .
. , S15). A sector is the smallest unit that can be
erased. Adjacent pairs of sectors (S0/S1, S2/S3,
. . . , S14/S15) are designated as a sector group.
A sector group is the smallest unit which can be
protected to prevent accidental or unauthorized
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Whenever a signal is separated into numbered
bits, e.g., DQ[7], DQ[6], ..., DQ[0], the family of
bits may also be shown collectively, e.g., as
DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexa-
decimal notation. The designation 0bXXXX indi-
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Table 1 defines the sector addresses, sector group
addresses and corresponding address ranges for
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