HY27UF161G2M Hynix Semiconductor, HY27UF161G2M Datasheet - Page 45

• Manufacturer Part Number: HY27UF161G2M
• Description: 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

MARKING INFORMATION
Rev 0.7 / Apr. 2005
- h y n ix
- K O R
- H Y 2 7 x F x x 1 G 2 M x x x x
- Y : Y ear (ex: 5 = yea r 2 0 0 5, 0 6= yea r 2 0 06 )
- w w : W ork W eek (ex: 12 = w o rk w eek 1 2 )
- x x : P ro cess C o d e
N o te
- C a p ita l L e tte r
- S m a ll L e tte r
H Y : H Y N IX
2 7 : N A N D Fla sh
x : P ow er S u pp ly
F : C la ssifica tion
x x : B it O rg an izatio n
1 G : D en sity
2 : M o d e
M : V ersio n
x : P a cka g e T ype
x : P a cka g e M a teria l
x : O p eratin g T em p erature
x : B ad B lock
P a ck a g
T S O P 1
W S O P
/
H
x
Y
x
2
x
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
: H yn ix S ym b o l
: O rig in C ou n try
: P art N u m b er
: U (2 .7V ~ 3 .6 V ), L(2 .7V ), S(1.8V )
: S in gle Level C ell+ S in g le D ie+ Larg e B lock
: 0 8(x8 ), 1 6(x1 6)
: 1 G b it
: 1 n C E & 1R /n B ; S equ en tia l R o w R ea d D isa b le
: 1 st G en era tion
: T (48-T S O P 1 ), V (4 8 -W S O P )
: B la n k(N o rm a l), P (L e ad F re e )
: C (0℃ ~ 7 0 ℃ ), E (-2 5 ℃ ~ 8 5 ℃ )
: B (In clu ded B a d B lo ck), S (1 ~ 5 B a d B lo ck),
: Fixed Item
: N o n -fixed Item
7
x
M (-3 0℃ ~ 8 5 ℃ ), I(-4 0 ℃ ~ 8 5 ℃ )
P (A ll G o o d B lo ck)
M a rk in g E x a m p le
x
F
HY27UF(08/16)1G2M Series
x
HY27SF(08/16)1G2M Series
Y
x
W
1
W
K
G
Preliminary
O
2
x
M
R
x
45