LPT80A Infineon Technologies Corporation, LPT80A Datasheet - Page 3

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LPT80A

Manufacturer Part Number
LPT80A
Description
Silicon NPN Phototransistor
Manufacturer
Infineon Technologies Corporation
Datasheet

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Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Abmessung der Chip-Fläche
Dimensions of chip area
Halbwinkel
Half angle
Kapaziät,
Capacitance
Dunkelstrom,
Dark current
Fotostrom
Photocurrent
E
E
Anstiegs- und Abfallzeit
Rise and fall time
R
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
2001-02-22
C
e
v
L
= 10% von
= 10% of
= 950 nm
=
= 1000 lx, Normlicht/standard light A,
= 0.5 mW/cm
= 1 k ,
I
PCE min
V
V
S
CE
max
T
= 5 V,
S
0.8,
V
= 5 V,
A
max
CE
= 25 C,
2
,
= 5 V
E
V
e
CE
f
= 0.5 mW/cm
= 950 nm,
= 1 MHz,
= 5 V,
= 950 nm)
E
I
C
= 0
2
= 1 mA
V
CE
= 5 V
3
Symbol
Symbol
L
L
C
I
I
I
t
V
r
R
PCE
PCE
,
S max
CEsat
CE
x
x
t
f
B
W
Wert
Value
850
430
0.55
3.3
3 (< 50)
> 0.25
3.2
10
150
35
0.55
1070
Einheit
Unit
nm
nm
mm
Grad
deg.
pF
nA
mA
mV
s
LPT 80 A
mm

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