MCH6413 Sanyo Semiconductor Corporation, MCH6413 Datasheet

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MCH6413

Manufacturer Part Number
MCH6413
Description
Ultrahigh-speed Switching
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH6413-TL-E
Manufacturer:
SONY/索尼
Quantity:
20 000
Ordering number : ENN7553
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KM
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =0.5A, V GS =2.5V
I D =0.1A, V GS =1.8V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
MCH6413
Conditions
Package Dimensions
unit : mm
2193A
Conditions
0.65
4
3
2
2.0
0.8mm)
5
2
1
6
0.3
[MCH6413]
min
N-Channel Silicon MOSFET
0.4
1.4
20
N1003 TS IM TA-4127
6
1
5
2
Ratings
0.15
typ
Ratings
4
3
145
185
245
2.4
MCH6413
Continued on next page.
--55 to +150
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
max
190
260
370
150
1.3
10
20
12
1
2
8
1
No.7553-1/4
Unit
Unit
m
m
m
W
V
V
A
A
V
V
S
C
C
A
A

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