MCH5811 Sanyo Semiconductor Corporation, MCH5811 Datasheet - Page 4
MCH5811
Manufacturer Part Number
MCH5811
Description
Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.MCH5811.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
0.01
100
1.0
1.0
0.1
1.0
0.8
0.6
0.4
0.2
10
10
10
0.001
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0.1
0
0
V DD =10V
V GS =4V
V DS =10V
I D =1.5A
2 3
20
2
5 7
1
Ambient Temperature, Ta -- C
40
0.01
Total Gate Charge, Qg -- nC
3
Drain Current, I D -- A
Drain Current, I D -- A
t f
SW Time -- I D
2 3
60
V GS -- Qg
2
P D -- Ta
y
t d (on)
5
fs -- I D
5 7
80
7
0.1
1.0
3
100
2 3
5 7
120
2
1.0
4
V DS =10V
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
140
3
2 3
IT02905
IT02907
IT07692
IT07669
160
MCH5811
5
5
5
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
0.3
2
Ciss, Coss, Crss -- V DS
0.4
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
Diode Forward Voltage, V SD -- V
Operation in this
area is limited by R DS (on).
0.1
0.5
6
2 3
I F -- V SD
0.6
8
A S O
5 7 1.0
0.7
10
Ciss
0.8
12
2
2 3
0.8mm) 1unit
0.9
14
5 7 10
1.0
16
[MOSFET]
[MOSFET]
[MOSFET]
<10 s
No.8059-4/6
f=1MHz
V GS =0
1.1
18
2 3
IT07681
IT02906
IT02908
1.2
20
5