MCH5823 Sanyo Semiconductor Corporation, MCH5823 Datasheet - Page 4

• Manufacturer Part Number: MCH5823
• Description: Mosfet : P-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

0.001
0.01
100
1.0
--10
1.0
0.8
0.6
0.4
0.2
1.0
0.1
10
10
--9
--8
--7
--6
--5
--4
--3
--2
--1
--0.01
0
5
3
2
7
5
3
2
7
5
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
V DS = --10V
I D = --1.5A
2
20
3
0.1
Ambient Temperature, Ta -- C
40
5 7
1
Total Gate Charge, Qg -- nC
Forward Voltage, V F -- V
Drain Current, I D -- A
SW Time -- I D
--0.1
60
V GS -- Qg
0.2
t d (on)
P D -- Ta
I F -- V F
2
80
2
3
0.3
5 7
100
--1.0
120
3
V DD = --10V
V GS = --10V
0.4
[MOSFET]
2
[MOSFET]
[MOSFET]
140
3
[SBD]
IT05619
IT05621
IT06929
IT07150
5 7
160
MCH5823
0.5
4
100000
10000
--0.01
1000
--1.0
--0.1
0.01
100
--10
100
1.0
0.1
10
10
--0.01
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2
3
Ciss, Coss, Crss -- V DS
--2
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
Operation in this
area is limited by R DS (on).
Reverse Voltage, V R -- V
--0.1
--4
5
2
I R -- V R
A S O
3
--6
5 7
--1.0
2
--8
0.8mm) 1unit
10
2
3
[MOSFET]
[MOSFET]
<10 s
--10
5 7
No.7757-4/5
f=1MHz
--10
[SBD]
IT05620
IT06928
IT07151
--12
15
2