MCH5812 Sanyo Semiconductor Corporation, MCH5812 Datasheet - Page 4

• Manufacturer Part Number: MCH5812
• Description: Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

1000
100
1.0
0.1
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
0.4
0.2
10
0
3
2
7
5
3
2
0.01
0.01
0
7
5
3
2
7
5
3
2
7
5
3
2
0
0
V DS =10V
V DS =10V
I D =2A
2
20
2
3
0.5
Ambient Temperature, Ta -- C
5 7
3
40
Total Gate Charge, Qg -- nC
Drain Current, I D -- A
Drain Current, I D -- A
t d (on)
0.1
SW Time -- I D
5
60
V GS -- Qg
1.0
P D -- Ta
y
7
2
fs -- I D
0.1
80
3
5 7
1.5
100
2
1.0
120
3
2
2.0
V DD =10V
V GS =4V
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
3
5
140
IT06293
IT06295
IT06297
IT07669
5 7 10
7
160
MCH5812
1.0
2.5
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
Ciss, Coss, Crss -- V DS
2 3
2
0.5
Operation in this
area is limited by R DS (on).
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
Diode Forward Voltage, V SD -- V
0.6
0.1
6
2 3
0.7
I F -- V SD
8
A S O
5 7
0.8
10
1.0
12
0.9
2
2 3
0.8mm) 1unit
14
5 7 10
1.0
16
[MOSFET]
[MOSFET]
[MOSFET]
No.7998-4/6
f=1MHz
V GS =0
1.1
18
2 3
IT06294
IT06296
IT07682
1.2
20
5