MCH3307 Sanyo Semiconductor Corporation, MCH3307 Datasheet

MCH3307

Manufacturer Part Number

MCH3307

Description

Ultrahigh-speed Switching , Package : MCPH3

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH3307.pdf (4 pages)

Current page: 1 of 4
Download datasheet (28Kb)

Ordering number : ENN7007

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JG

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =- -1mA, V GS =0

V DS =--20V, V GS =0

V GS = 8V, V DS =0

V DS =--10V, I D =--1mA

V DS =--10V, I D =--500mA

I D =- -500mA, V GS =- -4V

I D =- -300mA, V GS =- -2.5V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

MCH3307

Conditions

Package Dimensions

unit : mm

2167A

Conditions

0.65

2.0

0.8mm)

0.3

[MCH3307]

min

P-Channel Silicon MOSFET

0.84

--0.4

--20

71801 TS IM TA-3312

Ratings

0.15

typ

Ratings

380

540

1.2

MCH3307

Continued on next page.

--55 to +150

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

max

--1.4

500

760

150

--20

0.8

--1

--4

No.7007-1/4

Unit

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