Si7964DP Vishay Intertechnology, Si7964DP Datasheet
Si7964DP
Manufacturer Part Number
Si7964DP
Description
Dual N-Channel 60-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7964DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7964DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7964DP-T1-GE3
Manufacturer:
MAXIM
Quantity:
1 560
Part Number:
Si7964DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 73101
S-42058—Rev. B, 15-Nov-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
60
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7964DP-T1—E3
7
D1
t A bi
0.023 @ V
PowerPAK SO-8
r
6
DS(on)
D2
Bottom View
5
J
J
a
a
= 150_C)
= 150_C)
t
a
a
D2
GS
Parameter
Parameter
(W)
= 10 V
Dual N-Channel 60-V (D-S) MOSFET
1
a
a
S1
2
G1
a
3
I
S2
D
9.6
5.15 mm
(A)
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
g
New Product
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
43
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
D 100% R
D High Threshold Voltage At High Temperature
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
G
D
D
stg
1
N-Channel MOSFET
g
Tested
D
S
10 secs
Typical
1
1
9.6
7.7
2.9
3.5
2.2
2.2
26
60
−55 to 150
G
2
"20
60
40
25
31
N-Channel MOSFET
Steady State
Maximum
Vishay Siliconix
6.1
4.9
1.2
1.4
0.9
2.7
D
S
35
85
2
2
Si7964DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1
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