Si7962DP Vishay Intertechnology, Si7962DP Datasheet

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Si7962DP

Manufacturer Part Number
Si7962DP
Description
Dual N-Channel 40-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7962DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
40
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7962DP-T1—E3
7
D1
t A bi
0.017 @ V
PowerPAK SO-8
r
6
DS(on)
D2
Bottom View
5
J
J
a
a
= 150_C)
= 150_C)
t
a
a
D2
GS
Parameter
Parameter
(W)
= 10 V
Dual N-Channel 40-V (D-S) MOSFET
1
a
a
S1
2
G1
a
3
I
S2
D
11.1
5.15 mm
(A)
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
Q
T
T
T
T
t v 10 sec
A
A
A
A
g
46.2
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
D 100% R
D High Threshold Voltage At High Temperature
T
R
R
R
G
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
1
DS
GS
D
D
S
AS
D
D
stg
N-Channel MOSFET
g
D
S
Tested
1
1
10 secs
Typical
11.1
8.9
2.9
3.5
2.2
2.2
26
60
G
−55 to 150
2
"20
N-Channel MOSFET
40
40
30
45
Steady State
Maximum
Vishay Siliconix
D
S
2
2
7.1
5.7
1.2
1.4
0.9
2.7
35
85
Si7962DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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