Si7941DP Vishay Intertechnology, Si7941DP Datasheet
Si7941DP
Manufacturer Part Number
Si7941DP
Description
Dual P-channel 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7941DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7941DP
Manufacturer:
SAMSUNG
Quantity:
290
Company:
Part Number:
Si7941DP-T1-E3
Manufacturer:
VISHAY
Quantity:
1 190
Notes
a.
Document Number: 71630
S-03967—Rev. A, 04-Jun-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–30
(V)
8
D1
6.15 mm
7
D1
6
PowerPAKt SO-8
D2
Bottom View
0.039 @ V
0.027 @ V
5
J
a
= 150_C)
D2
a
r
Parameter
Parameter
DS(on)
_
Dual P-Channel 30-V (D-S) MOSFET
1
GS
GS
a
a
S1
= –4.5 V
= –10 V
(W)
2
G1
a
3
S2
5.15 mm
4
G2
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
–9.0
–7.5
= 25_C
= 70_C
= 25_C
= 70_C
(A)
_
G
Symbol
Symbol
1
T
R
R
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
D 3–4 Cell Li-Ion Battery Switch
D Bus Load Switch for Notebook/Desktop Computers
J
V
V
I
P
, T
thJC
DM
thJA
I
I
P-Channel MOSFET
GS
DS
D
S
D
Package with Low 1.07-mm Profile
stg
D
S
1
1
10 secs
Typical
–2.9
–9.0
–7.2
3.5
2.2
2.2
26
60
–55 to 150
"20
G
–30
–30
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
–1.2
–5.8
–4.7
1.4
0.9
2.7
35
85
S
D
2
2
Si7941DP
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1
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