Si7940DP Vishay Intertechnology, Si7940DP Datasheet
Si7940DP
Manufacturer Part Number
Si7940DP
Description
Dual N-channel 12-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7940DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7940DP
Manufacturer:
SONY
Quantity:
198
Company:
Part Number:
Si7940DP-T1-GE3
Manufacturer:
FREESCALE
Quantity:
101
Part Number:
Si7940DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71845
S-31727—Rev. C, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
12
12
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7940DP-T1
7
D1
t A bi
PowerPAK SO-8
6
D2
Bottom View
5
J
J
a
a
0.017 @ V
0.025 @ V
= 150_C)
= 150_C)
t
a
a
D2
Parameter
Parameter
r
DS(on)
Dual N-Channel 12-V (D-S) MOSFET
1
a
a
S1
GS
GS
(W)
= 4.5 V
= 2.5 V
2
G1
a
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
11.8
9.8
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
D
S
1
1
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PWM Optimized
D 100% R
APPLICATIONS
D Point-of-Load Synchronous Rectifier
D Synchronous Buck Shoot-Through Resistant
PowerPAKrPackage with Low 1.07-mm
Profile
- 5-V or 3.3-V BUS Step Down
- Q
10 secs
Typical
11.8
g
9.5
2.9
3.5
2.2
3.9
26
60
Optimized for 500-kHz + Operation
g
Tested
-55 to 150
G
"8
12
20
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
7.6
6.1
1.1
1.4
0.9
5.5
35
85
D
S
2
2
Si7940DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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