Si7921DN Vishay Intertechnology, Si7921DN Datasheet

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Si7921DN

Manufacturer Part Number

Si7921DN

Description

Dual P-channel 30-V (D-S) MOSFET

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7921DN.pdf (5 pages)

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Notes

a.

Document Number: 72341

S-31613—Rev. A, 11-Aug-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

- 30

- 30

(V)

J

8

ti

D1

3.30 mm

7

t A bi

D1

6

PowerPAK 1212-8

D2

0.110 @ V

0.063 @ V

J

J

a

a

5

= 150_C)

= 150_C)

t

a

a

Bottom View

D2

r

Parameter

Parameter

DS(on)

Dual P-Channel 30-V (D-S) MOSFET

GS

1

GS

a

a

S1

= - 4.5 V

= - 10 V

(W)

2

G1

a

3

Ordering Information: Si7921DN-T1

S2

3.30 mm

4

G2

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

t v 10 sec

T

T

T

T

I

New Product

A

A

A

A

D

- 5.1

- 3.8

= 25_C

= 85_C

= 25_C

= 85_C

(A)

Symbol

Symbol

T

R

R

R

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

APPLICATIONS

D Portable

J

V

V

I

P

P

, T

thJC

DM

thJA

I

I

I

GS

DS

D

D

S

G

D

D

stg

- Battery Switch

- Load Switch

1

P-Channel MOSFET

S

D

10 secs

Typical

1

1

- 5.1

- 3.7

- 2.1

2.5

1.3

5.6

40

75

- 55 to 150

"20

- 30

- 20

Steady State

G

Maximum

2

Vishay Siliconix

P-Channel MOSFET

0.85

- 3.7

- 2.7

- 1.1

1.3

50

94

7

Si7921DN

D

S

2

2

www.vishay.com

Unit

Unit

_C/W

_C

C/W

W

W

V

V

A

A

1

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