SI7970DP Vishay Intertechnology, SI7970DP Datasheet

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SI7970DP

Manufacturer Part Number

SI7970DP

Description

Dual N-channel 40-V (d-s) Mosfet

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7970DP.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI7970DP

Manufacturer:

Nat

Quantity:

1 200

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI7970DP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Download datasheet (63Kb)

Notes

a.

Document Number: 72826

S-40431—Rev. A, 15-Mar-04

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

40

40

(V)

J

Ordering Information: Si7970DP-T1—E3

8

D1

6.15 mm

ti

7

D1

t A bi

PowerPAK SO-8

6

D2

Bottom View

5

J

J

a

a

0.026 @ V

0.019 @ V

= 150_C)

= 150_C)

t

a

a

D2

Parameter

Parameter

r

DS(on)

Dual N-Channel 40-V (D-S) MOSFET

1

a

a

S1

GS

GS

(W)

= 4.5 V

2

= 10 V

G1

a

3

S2

5.15 mm

4

G2

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

L = 0.1 mH

T

T

T

T

t v 10 sec

A

A

A

A

I

New Product

= 25_C

= 70_C

= 25_C

= 70_C

D

10.2

8.7

(A)

G

1

Symbol

Symbol

N-Channel MOSFET

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

D Dual MOSFET for Space Savings

D 100% R

APPLICATIONS

D Primary Side Switch

D Intermediate BUS Switch

T

R

R

R

V

V

J

E

I

I

P

P

, T

DM

thJC

I

I

I

AS

thJA

DS

GS

D

D

S

AS

D

D

− Low Power Quarter Buck

stg

D

S

1

1

g

Tested

10 secs

Typical

10.2

8.2

2.9

3.5

2.2

2.2

26

60

−55 to 150

"20

G

40

40

30

45

2

Steady State

N-Channel MOSFET

Maximum

Vishay Siliconix

6.5

5.2

1.2

1.4

0.9

2.7

35

85

D

S

2

2

Si7970DP

www.vishay.com

Unit

Unit

_C/W

C/W

mJ

_C

W

W

V

V

A

1

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