SI7913DN Vishay Intertechnology, SI7913DN Datasheet
SI7913DN
Manufacturer Part Number
SI7913DN
Description
Dual P-channel 20-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7913DN.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7913DN
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
DS
−20
(V)
8
D1
J
3.30 mm
7
D1
ti
6
t A bi
PowerPAK 1212-8
D2
Bottom View
5
D2
0.048 @ V
0.066 @ V
0.037 @ V
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
1
Parameter
Parameter
DS(on)
S1
Dual P-Channel 20-V (D-S) MOSFET
GS
GS
GS
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)
2
a
a
G1
= −2.5 V
= −1.8 V
= −4.5 V
(W)
3
S2
a
3.30 mm
4
b,c
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−7.4
−6.5
−5.5
= 25_C
= 85_C
= 25_C
= 85_C
(A)
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
APPLICATIONS
D Portable
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
Package
stg
− PA Switch
− Battery Switch
− Load Switch
G
10 secs
Typical
P-Channel MOSFET
−7.4
−5.3
−2.3
2.8
1.5
35
75
4
−55 to 150
S
D
−20
−20
260
"8
Steady State
Maximum
Vishay Siliconix
−5.0
−3.6
−1.1
0.85
1.3
44
94
5
G
P-Channel MOSFET
Si7913DN
www.vishay.com
S
D
Unit
Unit
_C/W
_C
_C
C/W
W
W
V
V
A
A
RoHS
COMPLIANT
1
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