Si7892DP Vishay Intertechnology, Si7892DP Datasheet - Page 3

• Manufacturer Part Number: Si7892DP
• Description: N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71773
S-31727—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
60
10
10
1
8
6
4
2
0
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
10
10
On-Resistance vs. Drain Current
= 25 A
0.2
V
= 15 V
SD
T
J
Q
= 150_C
- Source-to-Drain Voltage (V)
g
I
0.4
20
D
20
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
30
30
0.6
0.8
40
40
V
V
GS
T
GS
J
= 4.5 V
= 25_C
= 10 V
1.0
50
50
1.2
60
60
0.020
0.016
0.012
0.008
0.004
0.000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-25
V
I
D
GS
= 25 A
C
V
2
6
= 10 V
rss
DS
V
T
GS
J
0
- Junction Temperature (_C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
Capacitance
25
4
12
Vishay Siliconix
C
50
iss
6
18
I
D
75
Si7892DP
= 25 A
100
www.vishay.com
8
24
125
10
150
30
3