Si7844DP Vishay Intertechnology, Si7844DP Datasheet - Page 3

• Manufacturer Part Number: Si7844DP
• Description: Dual N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71328
S-31728—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
0.032
0.024
0.016
0.008
0.000
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 10 A
0.2
On-Resistance vs. Drain Current
= 15 V
4
3
V
SD
Q
g
V
T
- Source-to-Drain Voltage (V)
I
0.4
GS
D
J
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
= 4.5 V
8
6
0.6
12
9
0.8
T
V
J
GS
= 25_C
16
12
1.0
= 10 V
1.2
20
15
1000
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 10 A
= 10 V
2
6
T
V
V
0
C
J
DS
GS
rss
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
= 10 A
Vishay Siliconix
C
50
C
oss
iss
18
6
75
Si7844DP
100
24
www.vishay.com
8
125
150
10
30
3