Si7842DP Vishay Intertechnology, Si7842DP Datasheet - Page 5

• Manufacturer Part Number: Si7842DP
• Description: Dual N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71617
S-31728—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
0.1
0.01
200
160
120
20
10
0.1
80
40
1
0
2
1
0
0
10
Reverse Current vs. Junction Temperature
Single Pulse
-5
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
V
6
DS
30 V
- Drain-to-Source Voltage (V)
50
T
C
J
oss
- Temperature (_C)
Capacitance
12
75
10
24 V
-4
Normalized Thermal Transient Impedance, Junction-to-Case
18
100
24
125
Square Wave Pulse Duration (sec)
150
10
30
-3
10
-2
10
1
0.0
0.3
T
J
V
= 150_C
Forward Voltage Drop
F
- Forward Voltage Drop (V)
10
0.6
-1
Vishay Siliconix
T
J
= 25_C
0.9
Si7842DP
SCHOTTKY
1.2
www.vishay.com
MOSFET
1
1.5
5