Si7540DP Vishay Intertechnology, Si7540DP Datasheet - Page 7
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Si7540DP
Manufacturer Part Number
Si7540DP
Description
N-and P-channel 12-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7540DP.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
Si7540DP-T1-E3
Manufacturer:
VISHAY
Quantity:
3 030
Part Number:
Si7540DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7540DP-T1-GE3
Manufacturer:
HITACHI
Quantity:
101
Part Number:
Si7540DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71911
S-31728—Rev. D, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
10
- 0.0
- 0.2
- 0.4
- 0.6
0.4
0.2
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
0.4
- Temperature (_C)
T
25
J
= 150_C
0.6
50
I
D
= 250 mA
75
0.8
0.01
100
0.1
10
100
1
T
0.1
J
r
DS(on)
= 25_C
1.0
Safe Operating Area, Junction-To-Ambient
125
Limited
I
D(on)
Single Pulse
Limited
T
A
V
= 25_C
150
1.2
DS
- Drain-to-Source Voltage (V)
BV
1
DSS
Limited
I
DM
10
0.15
0.12
0.09
0.06
0.03
0.00
Limited
40
32
24
16
1 ms
10 ms
100 ms
1 s
10 s
dc
8
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
100
0.1
= 3 A
1
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
2
Time (sec)
1
I
Vishay Siliconix
D
= 8.9 A
3
10
Si7540DP
P−CHANNEL
4
100
www.vishay.com
600
5
7