Si7456DP Vishay Intertechnology, Si7456DP Datasheet - Page 3

• Manufacturer Part Number: Si7456DP
• Description: N-channel 100-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71603
S-31989—Rev. D, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.04
0.03
0.02
0.01
0.00
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 9.3 A
0.2
On-Resistance vs. Drain Current
= 50 V
6
8
V
T
SD
J
Q
= 150_C
g
- Source-to-Drain Voltage (V)
I
0.4
D
12
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
16
0.6
18
V
GS
24
= 6.0 V
0.8
24
T
V
J
GS
= 25_C
32
1.0
30
= 10 V
1.2
40
36
3500
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
2.6
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 9.3 A
10
= 10 V
C
2
rss
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
20
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
50
30
C
oss
iss
I
6
D
75
= 9.3 A
40
Si7456DP
100
www.vishay.com
8
50
125
150
10
60
3