Si7450DP Vishay Intertechnology, Si7450DP Datasheet - Page 2

• Manufacturer Part Number: Si7450DP
• Description: N-channel 200-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7450DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
32
24
16
b
8
0
0
Parameter
a
a
2
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
a
a
J
4
= 25_C UNLESS OTHERWISE NOTED)
V
GS
= 10 thru 6 V
6
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
)
5 V
8
4 V
10
V
V
I
D
DS
DS
^ 4.0 A, V
= 100 V, V
I
= 160 V, V
F
V
V
V
V
V
V
V
V
DS
= 2.8 A, di/dt = 100 A/ms
I
DS
DS
DS
GS
V
DD
DD
Test Condition
GS
S
DS
= 2.8 A, V
= 0 V, V
= V
= 160 V, V
w 5 V, V
= 6.0 V, I
= 100 V, R
= 100 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
GS
= 10 V, R
= 10 V, I
D
= 0 V, T
GS
GS
D
D
= 250 mA
D
GS
L
L
= "20 V
= 4.0 A
= 5 A
= 4.0 A
= 10 V
= 25 W
= 25 W
= 0 V
= 0 V
40
35
30
25
20
15
10
J
D
5
0
G
= 55_C
= 4.0 A
0
= 6 W
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
2.0
0.2
40
T
3
C
0.065
0.070
Typ
0.75
12.0
0.85
25_C
7.5
19
34
14
20
32
25
70
= 125_C
S-31728—Rev. C, 18-Aug-03
Document Number: 71432
4
"100
Max
0.080
0.090
100
1.2
1.5
42
20
30
50
35
1
5
5
-55_C
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
6