SI7476DP Vishay Intertechnology, SI7476DP Datasheet - Page 3

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SI7476DP

Manufacturer Part Number
SI7476DP
Description
N-channel 40-V (d-s) Fast Switching Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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Document Number: 72569
S-40577—Rev. B, 29-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
10
= 25 A
20
0.2
On-Resistance vs. Drain Current
= 20 V
V
T
J
SD
Q
= 150_C
g
I
− Source-to-Drain Voltage (V)
20
40
− Total Gate Charge (nC)
D
0.4
− Drain Current (A)
Gate Charge
30
60
0.6
40
80
0.8
V
V
GS
GS
T
= 4.5 V
= 10 V
J
100
50
= 25_C
1.0
120
60
1.2
New Product
10000
0.020
0.016
0.012
0.008
0.004
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
−25
V
I
D
5
GS
= 25 A
V
V
2
= 10 V
GS
DS
T
10
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
C
oss
Capacitance
15
25
4
Vishay Siliconix
I
20
50
D
C
= 25 A
iss
6
25
75
Si7476DP
100
30
www.vishay.com
8
125
35
150
10
40
3

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