SI7456DP-T1 Vishay Intertechnology, SI7456DP-T1 Datasheet - Page 2

• Manufacturer Part Number: SI7456DP-T1
• Description: N-channel 100-v (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7456DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
32
24
16
b
8
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
a
a
J
= 10 thru 6 V
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5 V
4 V
5
V
V
I
DS
DS
D
^ 1 A, V
I
= 100 V, V
= 50 V, V
F
V
V
V
V
V
V
V
V
V
DS
= 4.3 A, di/dt = 100 A/ms
I
DS
DS
DS
Test Condition
GS
GS
DS
S
DD
DD
= 4.3 A, V
= 0 V, V
= V
= 100 V, V
w 5 V, V
= 10 V, I
= 6.0 V, I
= 15 V, I
= 50 V, R
= 50 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
D
= 0 V, T
D
GS
GS
D
D
L
L
= 250 mA
GS
= "20 V
= 9.3 A
= 8.8 A
= 9.3 A
= 50 W
= 50 W
= 10 V
= 0 V
= 0 V
40
32
24
16
D
J
G
8
0
= 85_C
= 9.3 A
= 6 W
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
0.5
40
2
T
C
= 125_C
25_C
3
0.021
0.023
Typ
1.27
0.8
8.6
35
36
10
20
10
46
26
50
S-31989—Rev. D, 13-Oct-03
Document Number: 71603
4
Max
"100
0.025
0.028
1.2
2.1
20
44
40
20
90
50
80
1
- 55_C
5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
6