SI7108DN Vishay Intertechnology, SI7108DN Datasheet - Page 3

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SI7108DN

Manufacturer Part Number
SI7108DN
Description
N-channel 20-V (d-s) Fast Switching Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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Document Number: 73216
S-51413—Rev. C, 01-Aug-05
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
10
= 22 A
0.2
On-Resistance vs. Drain Current
10
= 10 V
V
V
GS
SD
Q
T
J
g
= 4.5 V
= 150_C
I
– Source-to-Drain Voltage (V)
20
D
– Total Gate Charge (nC)
0.4
– Drain Current (A)
Gate Charge
20
30
0.6
30
40
0.8
V
GS
T
= 10 V
40
J
= 25_C
50
1.0
_
50
60
1.2
0.015
0.012
0.009
0.006
0.003
0.000
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
V
I
C
D
GS
rss
= 22 A
V
V
2
4
= 10 V
GS
DS
T
J
0
– Gate-to-Source Voltage (V)
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
25
Capacitance
4
8
C
I
oss
D
Vishay Siliconix
C
= 22 A
50
iss
12
6
75
Si7108DN
100
www.vishay.com
16
8
125
150
10
20
3

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