SI7136DP Vishay Intertechnology, SI7136DP Datasheet

SI7136DP

Manufacturer Part Number

SI7136DP

Description

R-C Thermal Model Parameters

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7136DP.pdf (3 pages)

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DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient

MOSFET.

R-C THERMAL MODEL FOR TANK CONFIGURATION

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 73741

Revision 16-Jan-06

R-C VALUES FOR TANK CONFIGURATION

Junction to

Thermal

RT1

RT2

RT3

RT4

CT1

CT2

CT3

CT4

Impedance

R-C Thermal Model Parameters

curves

558.7573 m

24.2344 m

70.7495 m

Ambient

50.6165

2.0963

9.0488

8.0177

1.4435

Thermal Capacitance (Joules/°C)

for

Thermal Resistance (°C/W)

the

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

690.6627 m

820.2806 m

136.5785 u

595.8486 u

2.3554 m

9.9128 m

8.8712 m

1.6922

Case

Si7136DP_RC

Vishay Siliconix

Foot

N/A

www.vishay.com

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