SI7120DN Vishay Intertechnology, SI7120DN Datasheet

SI7120DN

Manufacturer Part Number

SI7120DN

Description

N-channel 60-V (d-s) Mosfet

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7120DN.pdf (5 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7120DN-T1

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7120DN-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7120DN-T1-GE3

Manufacturer:

MICROSEMI

Quantity:

15 840

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7120DN-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes

Document Number: 72771

S-51128—Rev. D, 13-Jun-05

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

Surface Mounted on 1” x 1” FR4 Board.

See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

(V)

3.30 mm

t A bi

PowerPAK 1212-8

0.028 @ V

0.019 @ V

= 150_C)

Bottom View

Parameter

DS(on)

(W)

N-Channel 60-V (D-S) MOSFET

= 4.5 V

= 10 V

b,c

Ordering Information: Si7120DN-T1

3.30 mm

= 25_C UNLESS OTHERWISE NOTED)

Steady State

L = 0 1 mH

L = 0.1 mH

t v 10 sec

= 25_C

= 70_C

= 25_C

= 70_C

8.2

(A)

Si7120DN-T1—E3 (Lead (Pb)-Free)

Symbol

, T

thJC

thJA

stg

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance

D PowerPAKr 1212-8 Package with

D 100% R

APPLICATIONS

D Primary Side Switch

D Synchronous Rectification

Low 1.07-mm Profile

10 secs

Typical

8.0

3.2

3.8

2.4

1.9

Tested

−55 to 150

N-Channel MOSFET

"20

260

Steady State

Maximum

Vishay Siliconix

6.3

5.1

1.3

1.5

1.0

2.4

Si7120DN

www.vishay.com

Unit

_C/W

C/W

RoHS

COMPLIANT

Available

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