LM5111-2M National Semiconductor, LM5111-2M Datasheet

LM5111-2M

Manufacturer Part Number

LM5111-2M

Description

Dual 5A Compound Gate Driver

Manufacturer

National Semiconductor

Datasheet

1.LM5111-2M.pdf (10 pages)

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LM5111

Dual 5A Compound Gate Driver

General Description

The LM5111 Dual Gate Driver replaces industry standard

gate drivers with improved peak output current and effi-

ciency. Each “compound” output driver stage includes MOS

and bipolar transistors operating in parallel that together sink

more than 5A peak from capacitive loads. Combining the

unique characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature. Under-

voltage lockout protection is also provided. The drivers can

be operated in parallel with inputs and outputs connected to

double the drive current capability. This device is available in

the SOIC-8 package.

Features

n Independently drives two N-Channel MOSFETs

n Compound CMOS and bipolar outputs reduce output

n 5A sink/3A source current capability

n Two channels can be connected in parallel to double the

Pin Configurations

current variation

drive current

DS201123

SOIC-8

n Independent inputs (TTL compatible)

n Fast propagation times (25 ns typical)

n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF

n Available in dual non-inverting, dual inverting and

n Supply rail under-voltage lockout protection

n Pin compatible with industry standard gate drivers

Typical Applications

n Synchronous Rectifier Gate Drivers

n Switch-mode Power Supply Gate Driver

n Solenoid and Motor Drivers

Package

n SOIC-8

load)

combination configurations

20112301

www.national.com

July 2004

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