LM3671MFX-1.375 National Semiconductor, LM3671MFX-1.375 Datasheet - Page 4

• Manufacturer Part Number: LM3671MFX-1.375
• Description: 2MHz / 600mA Step-Down DC-DC Converter in SOT23-5
• Manufacturer: National Semiconductor

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V
V
V
I
I
R
R
I
V
V
I
F
SHDN
Q_PFM
LIM
EN
OSC
IN
OUT
REF
DSON (P)
DSON (N)
IH
IL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
type apply over the full operating junction temperature range (−25˚C ≤ T
apply to the LM3671 Typical Application Circuit (Figure. 1) with V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential at the GND pin.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
130˚C (typ.).
Note 4: The Human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF capacitor discharged
directly into each pin. MIL-STD-883 3015.7
Note 5: In Applications where high power dissipation and/or poor package resistance is present, the maximum ambient temperature may have to be derated.
Maximum ambient temperature (T
the application (P
(θ
Note 6: Junction to ambient thermal resistance is highly application and board layout dependent. In applications where high power dissipation exists, special care
must be given to thermal dissipation issues in board design. Value specified here 250 ˚C/W is based on measurement results using a 2 layer, 4" x 3", 2 oz Cu board
as per JEDEC standards. The (θ
Note 7: For the ADJ version the resistor dividers should be selected such that at the desired output voltage,the voltage at the FB pin is 0.5V.
V
FB, SW, EN Pin:
Continuous Power Dissipation
(Note 3)
Junction Temperature (T
Storage Temperature Range
Maximum Lead Temperature
ESD Rating (Note 4)
V
Symbol
JA
IN
IN
(Soldering, 10 sec.)
Human Body Model:
x P
,GND,SW,FB
Pin: Voltage to GND
D-MAX
). Refer to Dissipation rating table for P
Input Voltage Range
Output Voltage
Line Regulation
Load Regulation
Internal Reference Voltage
Shutdown Supply Current
DC Bias Current into V
Pin-Pin Resistance for PFET
Pin-Pin Resistance for NFET
Switch Peak Current Limit
Logic High Input
Logic Low Input
Enable (EN) Input Current
Internal Oscillator Frequency
D-MAX
) and the junction to ambient thermal resistance of the package (θ
J-MAX
Parameter
JA
A-MAX
) can be as low as 140 ˚C/W if a 4 layer, 4" x 3", 2/1/1/2 oz. Cu board as per JEDEC standards is used.
)
) is dependent on the maximum operating junction temperature (T
IN
D-MAX
Internally Limited
−65˚C to +150˚C
(Notes 2, 9, 10) Limits in standard typeface are for T
(GND−0.2V) to
−0.2V to 6.0V
(V
values at different ambient temperatures.
(Note 1)
IN
(Note 11)
I
I
2.8V ≤ V
I
100 mA ≤ I
V
(Note 7)
EN = 0V
No load, device is not switching (FB
forced higher than programmed output
voltage)
V
V
Open Loop (Note 8)
PWM Mode
+ 0.2V)
+125˚C
O
O
O
2.0 kV
IN
IN
IN
260˚C
= 0 mA
= 100 mA
= 10 mA
= 3.6V
= V
= V
GS
GS
IN
= 3.6V
= 3.6V
O
≤ 5.5V
4
≤ 300 mA
IN
Condition
Operating Ratings
Thermal Properties
Input Voltage Range
Recommended Load Current
Junction Temperature (T
Ambient Temperature (T
Junction-to-Ambient
Thermal Resistance (θ
(SOT23-5) (Note 6)
= EN = 3.6V, V
JA
Human Body Model: EN
Machine Model: All Pins
) in the application, as given by the following equation:T
J
≤ +125˚C). Unless otherwise noted, specifications
J-MAX
OUT
), the maximum power dissipation of the device in
= 1.5V
JA
A
J
)
) Range
) Range (Note 5)
Min
830
2.8
1.0
1.6
−2
−4
J
= 150˚C (typ.) and disengages at T
J
(Notes 1, 2)
= 25˚C. Limits in boldface
0.0031
0.045
1020
0.01
0.01
Typ
380
250
0.5
16
2
−25˚C to +125˚C
1150
0mA to 600 mA
Max
−25˚C to +85˚C
500
400
5.5
0.4
2.6
+4
+4
35
A-MAX
1
1
2.8V to 5.5V
250˚C/W
= T
500V
200V
J-MAX
%/mA
Units
MHz
%/V
mΩ
mΩ
mA
µA
µA
µA
%
%
V
V
V
V
J
=
−