MJ16012 ON, MJ16012 Datasheet - Page 6

• Manufacturer Part Number: MJ16012
• Description: NPN SILICON POWER TRANSISTORS
• Manufacturer: ON

MJ16010 MJW16010 MJ16012 MJW16012
FORWARD BIAS
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when T C
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 15 may be found at any case tem-
perature by using the appropriate curve on Figure 18.
high case temperatures, thermal limitations will reduce the
* f =
6
There are two limitations on the power handling ability of a
The data of Figure 15 is based on T C = 25 _ C; T J(pk) is
T J(pk) may be calculated from the data in Figure 17. At
0.05
0.02
5.0
2.0
1.0
0.5
0.1
20
10
I B1
I C
5.0
I C
I B
Figure 13. Inductive Switching Measurements
V CE
25 _ C. Second breakdown limitations do not der-
MJW16010,12
10
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Maximum Forward Bias
90% I B1
T C = 25 C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Safe Operating Area
20
t sv
MJ16010/12
I C(pk)
30
90% V CE(pk)
TIME
dc
50
GUARANTEED SAFE OPERATING AREA LIMITS
10% V CE(pk)
t rv
70
SAFE OPERATING AREA INFORMATION
100
t c
90% I C(pk)
1.0 ms
t fi
V CE(pk)
I C (pk) 2% I C
10%
200 300
t ti
10 s
450
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 16 gives the RBSOA character-
istics.
For inductive loads, high voltage and high current must be
10
6.0
2.0
20
18
14
10
9
8
7
6
5
4
3
2
1
0
0
100
0
Motorola Bipolar Power Transistor Device Data
V CE(pk) , PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
I B1 = 2.0 A
T C 100 C
Figure 14. Peak Reverse Base Current
f * 4.0
Figure 16. Maximum Reverse Bias
V BE(off) , REVERSE BASE VOLTAGE (VOLTS)
150
1.0 A
1.0
200
Safe Operating Area
2.0
250
V BE(off) = 0 V
350
3.0
450
I C = 10 A
T C = 25 C
600
4.0
1.0 to 5.0 V
700
850
5.0