Q60215-Y1111 Siemens (acquired by Infineon Technologies Corporation), Q60215-Y1111 Datasheet - Page 4

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Q60215-Y1111

Manufacturer Part Number
Q60215-Y1111
Description
Npn-silizium-fototransistor Silicon NPN Phototransistor
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
Bezeichnung
Description
Fotostrom,
Photocurrent
E
E
A,
V
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
Stromverstärkung
Current gain
E
1)
1)
Semiconductor Group
C
C
e
v
CE
e
e
= 1 mA,
=
= 1000 Ix, Normlicht/standard light
I
I
= 0.5 mW/cm
= 0.5 mW/cm
= 0.5 mW/cm
PCEmin
PCEmin
= 5 V
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe
is the min. photocurrent of the specified group
1)
V
CC
0.3,
950 nm
= 5 V,
2
2
2
,
,
V
V
CE
CE
R
= 5 V
= 5 V
L
= 1 k
Symbol
Symbol
I
I
t
V
I
I
r
PCE
PCE
PCE
PCB
,
CEsat
t
f
241
-2
0.5 ... 1.0
3.0
5
150
170
-3
0.8 ... 1.6
4.6
7
150
270
Value
Wert
-4
1.25 ... 2.5
7.2
9
160
420
-5
11.4
12
180
670
2.0
BPY 62
Einheit
Unit
mA
mA
mV
s

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