GT50J322_06 Toshiba America Electronic Components, Inc., GT50J322_06 Datasheet - Page 2

• Manufacturer Part Number: GT50J322_06
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
• Manufacturer: Toshiba America Electronic Components, Inc.

Electrical Characteristics
0
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Diode forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
R
Characteristics
G
Rise time
Turn-on time
Fall time
Turn-off time
V
CC
R
L
(Ta = 25°C)
0
0
V
V
Symbol
GE (OFF)
CE (sat)
I
I
C
GES
CES
V
V
t
t
V
t
on
off
t
t
I
ies
rr
GE
CE
r
f
C
F
t
90%
d (off)
V
V
I
I
V
Resistive Load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 15 A, V
= 15 A, di/dt = 100 A/ s
= 50 mA, V
= 50 A, V
= ±25 V, V
= 600 V, V
= 10 V, V
= 300 V, I
= ±15 V, R
t
90%
off
t
2
f
10%
GE
GE
Test Condition
CE
GE
C
= 0
GE
= 15 V
CE
G
= 50 A
= 5 V
= 0, f = 1 MHz
= 39
= 0
= 0
10%
10%
(Note 1)
t
on
t
r
90%
Min
3.0
2500
Typ.
0.20
0.27
0.19
0.44
1.9
GT50J327
2005-02-09
±500
0.32
Max
1.0
6.0
2.3
2.0
0.2
Unit
mA
nA
pF
V
V
V
s
s