BSM400GB60DN2 Siemens (acquired by Infineon Technologies Corporation), BSM400GB60DN2 Datasheet - Page 3

• Manufacturer Part Number: BSM400GB60DN2
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Semiconductor Group
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
d i
Reverse recovery charge
I
d i
F
F
F
F
CC
CC
CC
CC
Gon
Gon
Goff
Goff
F
F
= 400 A, V
= 400 A, V
= 400 A, V
= 400 A, V
/ dt = -2000 A/µs, T
/ dt = -2000 A/µs, T
= 300 V, V
= 300 V, V
= 300 V, V
= 300 V, V
= 4.7
= 4.7
= 4.7
= 4.7
GE
GE
R
R
= -300 V, V
= -300 V, V
GE
GE
GE
GE
= 0 V, T
= 0 V, T
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
j
= 125 °C
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 400 A
= 400 A
= 0 V
= 0 V
= 400 A
= 400 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
Values
typ.
200
190
680
510
170
15
1.9
1.7
BSM 400 GB 60 DN2
max.
-
-
-
-
-
-
-
2.4
Apr-25-1997
Unit
ns
V
ns
µC