RN4911 Toshiba America Electronic Components, Inc., RN4911 Datasheet - Page 3

• Manufacturer Part Number: RN4911
• Description: Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
• Manufacturer: Toshiba America Electronic Components, Inc.

Q1 Electrical Characteristics
Q2 Electrical Characteristics
Q1, Q2 Common Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
Characteristic
Characteristic
Characteristic
V
V
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
Symbol
CE (sat)
CE (sat)
I
I
I
I
CBO
h
C
CBO
h
C
EBO
EBO
R1
f
f
FE
FE
T
ob
T
ob
Circuit
Circuit
Circuit
Test
Test
Test
―
―
―
―
―
―
―
―
―
―
―
―
―
3
V
V
V
I
V
V
V
V
V
I
V
V
C
C
(Ta = 25°C)
CB
EB
CE
CE
CB
CB
EB
CE
CE
CB
= −5mA, I
= 5mA, I
= −50V, I
= −5V, I
= −5V, I
= −10V, I
= −10V, I
= 50V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
E
C
E
= 0.25mA
= 0
= 1mA
E
C
E
= −0.25mA
= 0
= 0
= 5mA
= 0, f = 1 MHz
= −1mA
―
= 0
= −5mA
= 0, f = 1MHz
Min
120
Min
120
Min
―
―
―
―
―
―
―
―
―
―
7
Typ.
−0.1
Typ.
Typ.
200
250
0.1
10
―
―
―
―
―
―
3
3
2001-06-07
−100
−100
−0.3
Max
Max
Max
400
100
100
700
0.3
13
―
―
6
6
RN4911
MHz
MHz
Unit
Unit
Unit
mA
mA
nA
nA
kΩ
pF
pF
―
―
V
V