BCR8PM-16 Mitsubishi Electronics America, Inc., BCR8PM-16 Datasheet - Page 2

• Manufacturer Part Number: BCR8PM-16
• Manufacturer: Mitsubishi Electronics America, Inc.

ELECTRICAL CHARACTERISTICS
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The contact thermal resistance R
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
PERFORMANCE CURVES
I
V
V
V
V
I
I
I
V
R
(dv/dt)
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
DRM
FGT !
RGT !
RGT #
TM
FGT !
RGT !
RGT #
GD
th (j-c)
Symbol
T
(di/dt)
V
j
D
=125°C
=400V
c
c
=–4.0A/ms
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
10
10
10
10
MAXIMUM ON-STATE CHARACTERISTICS
–1
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0.6
1.0
Parameter
Test conditions
ON-STATE VOLTAGE (V)
✽2
1.4
✽2
th (c-f)
1.8
T
in case of greasing is 0.5°C/W.
j
= 25°C
2.2
!
@
#
!
@
#
✽4
2.6
T
j
T
T
T
T
T
Junction to case
T
= 125°C
3.0
j
c
j
j
j
j
=125°C, V
=25°C, V
=25°C, V
=125°C, V
=125°C
=25°C, I
3.4
TM
D
D
DRM
D
=6V, R
=6V, R
3.8
=12A, Instantaneous measurement
=1/2V
applied
✽3
L
L
DRM
=6Ω, R
=6Ω, R
Test conditions
G
G
=330Ω
=330Ω
INSULATED TYPE, PLANAR PASSIVATION TYPE
100
90
80
70
60
50
40
30
20
10
0
Commutating voltage and current waveforms
10
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
RATED SURGE ON-STATE CURRENT
0
(dv/dt)c
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
(inductive load)
4
5 7 10
Min.
0.2
1
—
—
—
—
—
—
—
—
—
10
MEDIUM POWER USE
(di/dt)c
2 3
BCR8PM-16
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
TIME
TIME
TIME
V
4
D
5 7 10
Max.
2.0
1.6
1.5
1.5
1.5
3.7
—
—
30
30
30
2
Mar. 2002
°C/ W
V/µs
Unit
mA
mA
mA
mA
V
V
V
V
V