BCR8PM Mitsubishi Electronics America, Inc., BCR8PM Datasheet - Page 2

• Manufacturer Part Number: BCR8PM
• Description: Low Power Use Insulated Type, Planar Passivation Type Triac
• Manufacturer: Mitsubishi Electronics America, Inc.

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150 C
ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
V
V
V
V
I
I
I
V
R
(dv/dt)
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
DRM
FGT !
RGT !
RGT #
TM
FGT !
RGT !
RGT #
GD
th (j-c)
Symbol
T
(di/dt)
V
j
D
=125 C
=400V
c
c
=–4.0A/ms
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
10
10
10
10
MAXIMUM ON-STATE CHARACTERISTICS
–1
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0.6
Parameter
1.0
Test conditions
ON-STATE VOLTAGE (V)
1.4
2
2
th (c-f)
T
1.8
j
= 25 C
in case of greasing is 0.5 C/W.
2.2
!
@
#
!
@
#
2.6
T
4
j
= 125 C
T
T
T
T
T
Junction to case
T
j
c
j
j
j
j
=125 C, V
=25 C, V
=25 C, V
=125 C, V
=125 C
3.0
=25 C, I
3.4
TM
D
D
DRM
=6V, R
=6V, R
D
=12A, Instantaneous measurement
3.8
=1/2V
applied
3
L
L
DRM
=6 , R
=6 , R
Test conditions
G
G
=330
=330
INSULATED TYPE, PLANAR PASSIVATION TYPE
100
90
80
70
60
50
40
30
20
10
Commutating voltage and current waveforms
0
10
MITSUBISHI SEMICONDUCTOR TRIAC
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
RATED SURGE ON-STATE CURRENT
0
(dv/dt)c
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
(inductive load)
4
5 7 10
Min.
0.2
1
10
—
—
—
—
—
—
—
—
—
MEDIUM POWER USE
(di/dt)c
2 3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
TIME
TIME
TIME
V
4
D
5 7 10
BCR8PM
Max.
2.0
1.5
1.5
1.5
1.5
3.7
—
—
20
20
20
2
Mar. 2002
V/ s
Unit
C/ W
mA
mA
mA
mA
V
V
V
V
V