BCR108E6327 Infineon Technologies Corporation, BCR108E6327 Datasheet - Page 3

• Manufacturer Part Number: BCR108E6327
• Description: NPN Silicon Digital Transistor
• Manufacturer: Infineon Technologies Corporation

DC Current Gain h
V
Input on Voltage V
V
CE
CE
mA
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
= 0.3V (common emitter configuration)
-
-1
3
2
1
0
2
1
0
10
10
-1
-1
10
10
FE
0
0
i(on)
= f (I
= f (I
C
)
C
10
10
)
1
1
mA
V
I
V
C
i(on)
10
10
2
2
3
Collector-Emitter Saturation Voltage
V
Input off voltage V
V
CEsat
CE
mA
mA
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
-1
-2
-3
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
2
1
0
1
0
= f (I
C
), h
0.1
FE
= 20
0.2
i(off)
= f (I
0.3
C
Nov-29-2001
)
BCR108
V
V
V
V
CEsat
i(off)
0.5
1.0